By Topic

Strained InGaAs quantum well lasers with small-divergence angles for high-power pump modules

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $33
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
J. Temmyo ; NTT Opto-Electron. Labs., Kanagawa ; M. Shimizu

Epitaxial structures were designed for high-power strained InGaAs/AlGaAs quantum well lasers with low vertical-divergence emitting angles. The vertical divergence angles achieved were down to ~20°. High power output 1.02 μm pump modules with well-designed strained quantum well lasers have been developed for a 1.3 μm band Pr+ -doped fibre amplifier. A maximum optical fibre output of 157 mW was obtained

Published in:

Electronics Letters  (Volume:30 ,  Issue: 24 )