Referenced Items are not available for this document.
A simulation of the highest efficiency (19.1% AMO) n+p indium phosphide (InP) solar cell was made using a computer code PC-1D in order to understand it and suggest future improvements to it. Available cell design and process data was used in the simulation. Minority carrier diffusion lengths in the emitter and base have been varied to match the experimental cell I-V characteristics with the calculated results. To further understand and improve the InP cell efficiency, simulations were performed using improved values of cell material and process parameters. We show that the efficiency of this cell could be increased to more than 23% AMO by incorporating the suggested cell material, design and process improvements. At these high efficiencies InP cell technology will be very attractive for space use
Published in:
Electron Devices, IEEE Transactions on
(Volume:41
,
Issue:
12
)
Date of Publication: Dec 1994
- Page(s):
- 2473 - 2475
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 4854414
- Digital Object Identifier :
- 10.1109/16.337476
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Dec 1994
- Sponsored by :
- IEEE Electron Devices Society
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