Cart (Loading....) | Create Account
Close category search window
 

Current transport over parabolic potential barriers in semiconductor devices

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Crowell, C.R. ; Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA ; Hafizi, M.

Current transport over the potential barrier of an n+-p-n+ structure is studied using the diffusion theory and the thermionic-diffusion theory of current transport. Thermionic emission over the barrier is shown to be the asymptotic isothermal diffusion current. The J-V characteristics are derived for both the diffusion and thermionic-diffusion models. In particular, when the Bethe and the thermionic-diffusion (T-D) models are compared, both with and without backscattering effects, it is seen that the T-D model with backscattering is preferable to the Bethe approach and requires a relatively lower dopant concentration to be applicable. It is shown that two characteristic velocities are needed for the transport analysis: an effective collection velocity to terminate the region in which current is driven by diffusion and an emission velocity associated with carrier injection beyond the potential energy maximum. For a typical situation, the emission velocity can be as much as a factor of four greater than the collection velocity, showing that the velocity of injected carriers beyond the maximum can appreciably exceed the scatter-limited velocity

Published in:

Electron Devices, IEEE Transactions on  (Volume:35 ,  Issue: 7 )

Date of Publication:

Jul 1988

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.