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An analytical and experimental investigation of the cutoff frequency
The effects of vertical and lateral structures on cutoff frequency and breakdown voltage are investigated for high-speed bipolar transistors. The cutoff frequencies are examined in the range from 2.5 to 80 GHz by analysis and from 3 to 20 GHz by experiment. To attain the maximum cutoff frequency, it is predicted that the collector width, the base width, and the collector concentration should be 0.12 μm, 0.07 μm, and 1.2×1016 cm-3, respectively, and that in this scaled transistor, breakdown voltages, BVCE0 and BVC8O should be reduced below 3 and 7.7 V respectively
Published in:
Electron Devices, IEEE Transactions on
(Volume:35
,
Issue:
7
)
Date of Publication: Jul 1988
- Page(s):
- 1021 - 1028
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 3232531
- Digital Object Identifier :
- 10.1109/16.3360
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Jul 1988
- Sponsored by :
- IEEE Electron Devices Society
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