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Low voltage characteristics of InGaAs/InP composite channel HEMT structure fabricated by optical lithography

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3 Author(s)
Strahle, S. ; Dept. of Electron Devices & Circuits, Ulm Univ. ; Henle, B. ; Kohn, E.

A 0.65 μm gate length composite channel InP-HEMT for low bias use in mobile communication is discussed. At VD=1.6 V a record fmax/fT=2.6 in combination with fT L8=39 GHz μm or 2.45×107 cm/s, which is essentially above the collision dominated value, is obtained. The fT is already higher than 40 GHz (fTLg =26 GHz μm) at VD=0.75 V with an associated fmax/fT=1.6

Published in:

Electronics Letters  (Volume:30 ,  Issue: 23 )

Date of Publication:

10 Nov 1994

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