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A monolithic 2-52 GHz HEMT matrix distributed amplifier in coplanar waveguide technology

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3 Author(s)
Heilig, R. ; Alcatel SEL, Pforzheim, Germany ; Hollmann, D. ; Baumann, G.

This paper discusses design, performance and fabrication of a two stages four sections GaAs monolithic matrix distributed amplifier covering the frequency range from 2 to 52 GHz. The achieved gain is about 9 dB and the return loss is better than 12 dB. The devices we used are 2/spl times/25 /spl mu/m, 0.2 /spl mu/m recessed gate AlGaAs HEMTs and the coplanar waveguide was the propagation medium for this broadband amplifier. The chip dimensions of the amplifier including the bias networks are 2.0 mm/spl times/2.5 mm.<>

Published in:

Microwave Symposium Digest, 1994., IEEE MTT-S International

Date of Conference:

23-27 May 1994

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