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Design of W-band monolithic low noise amplifiers using accurate HEMT modeling

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9 Author(s)
Kashiwa, T. ; Optoelectron. & Microwave Devices R&D Lab., Mitsubishi Electr. Corp., Hyogo, Japan ; Tanino, N. ; Minami, H. ; Katoh, T.
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A W-band monolithic two-stage low noise amplifiers have been developed using new accurate HEMT modeling. The modeling includes intrinsic FET noise parameters that are independent of frequency. A noise figure of 5.5 dB with an associated gain of 8.7 dB is achieved at 91 GHz when biased for low noise figure, and a small signal gain of 10.4 dB with noise figure of 5.9 dB is obtained when biased for high gain. Good agreement between measured and simulated data of the low noise amplifier verifies the HEMT modeling.<>

Published in:

Microwave Symposium Digest, 1994., IEEE MTT-S International

Date of Conference:

23-27 May 1994