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Design and fabrication of 5 Gb/s fully integrated OEIC receivers using direct ion implanted GaAs MESFET-MSM

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4 Author(s)
C. -G. Shih ; Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA ; D. Barlage ; J. -S. Wang ; M. Feng

We report a high performance blanket ion implanted 0.6 /spl mu/m GaAs-MESFET/MSM receiver circuit. The receiver is fabricated without the use of a grown layer which opens the door for low cost applications. The significance of this work is that the full receiver exhibits an electrical dynamic range of 36 dB, and produces a minimum 700 mV electrical output signals at -15 dBm optical input. Data rates in excess of 5 Gb/s have been achieved utilizing a 75/spl times/75 /spl mu/m MSM detector.<>

Published in:

Microwave Symposium Digest, 1994., IEEE MTT-S International

Date of Conference:

23-27 May 1994