Referenced Items are not available for this document.
A systematic study has been done on the carrier injection mechanism and electroluminescent properties of an amorphous silicon-carbide p-i-n junction thin-film light-emitting diode (a-SiC TFLED). The analysis of the junction characteristics reveals that the main contribution to the junction current comes from electrons injected by tunneling from the n-layer through the i-n interface notch barrier, while the electroluminescent property of the TFLED is determined by the injection process of holes. This process also takes place by tunneling, in this case from the p-layer through the p-i interface notch barrier. On the basis of the results of the analysis, a method to improve the LED performance using a hot-carrier-tunneling injector structure is proposed. With this structure, the brightness of the TFLED is increased by more than one order of magnitude to about 20 cd/m2, with an injection current density of 600 mA/cm2
Published in:
Electron Devices, IEEE Transactions on
(Volume:35
,
Issue:
7
)
Date of Publication: Jul 1988
- Page(s):
- 957 - 965
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 3232522
- Digital Object Identifier :
- 10.1109/16.3351
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Jul 1988
- Sponsored by :
- IEEE Electron Devices Society
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