By Topic

High temperature characteristics of strained InGaAs/lnGaAsP quantum well lasers lattice matched to GaAs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Seoung-Hwan Park ; Dept. of Phys., Hyosung Women's Univ., Kyeongbuk, South Korea ; Weon-Guk Jeong ; Byung-Doo Choe

The effect of high temperature on the threshold current density and the gain of In/sub x/Ga/sub 1-x/As/InGaAsP (E/sub g/=1.6 eV) QW lasers lattice matched to GaAs is investigated theoretically. These results are also compared with those of In/sub x/Ga/sub 1-x/As/GaAs QW lasers. It is found that better performance can be achieved in InGaAs/InGaAsP lasers compared to InGaAs/GaAs lasers at high temperature. This is due to the fact that the temperature dependence of the threshold carrier density for InGaAs/InGaAsP lasers is weaker than that for InGaAs/GaAs lasers. The calculated characteristic temperature is in good agreement with reported experimental results.<>

Published in:

IEEE Photonics Technology Letters  (Volume:6 ,  Issue: 11 )