Referenced Items are not available for this document.
Three-step selective area metalorganic chemical vapor deposition is used to fabricate strained layer InGaAs-GaAs-AlGaAs single quantum well broad spectrum LEDs. We have fabricated a device with a continuous variation in quantum well thickness along its length by using a tapered oxide width mask for the active region regrowth. A spectral emission width of 80 nm is obtained.<
Published in:
Photonics Technology Letters, IEEE
(Volume:6
,
Issue:
11
)
Date of Publication: Nov. 1994
- Page(s):
- 1289 - 1292
- ISSN :
- 1041-1135
- INSPEC Accession Number:
- 4844401
- Digital Object Identifier :
- 10.1109/68.334816
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Nov. 1994
- Sponsored by :
- IEEE Photonics Society
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