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A strained-layer InGaAs-GaAs-AlGaAs single quantum well broad spectrum LED by selective-area metalorganic chemical vapor deposition

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6 Author(s)
Osowski, M.L. ; Mater. Res. Lab., Illinois Univ., Urbana, IL, USA ; Cockerill, T.M. ; Lammert, R.M. ; Forbes, D.V.
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Three-step selective area metalorganic chemical vapor deposition is used to fabricate strained layer InGaAs-GaAs-AlGaAs single quantum well broad spectrum LEDs. We have fabricated a device with a continuous variation in quantum well thickness along its length by using a tapered oxide width mask for the active region regrowth. A spectral emission width of 80 nm is obtained.<>

Published in:

Photonics Technology Letters, IEEE  (Volume:6 ,  Issue: 11 )

Date of Publication:

Nov. 1994

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