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Superthin O/N/O stacked dielectrics formed by oxidizing thin nitrides in low pressure oxygen for high-density memory devices

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4 Author(s)
Su, H.P. ; Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Liu, H.W. ; Hong, G. ; Cheng, H.C.

High-performance superthin oxide/nitride/oxide (O/N/O) stacked dielectrics have been successfully achieved by oxidizing thin nitride films in low-pressure dry-oxygen at 850/spl deg/C for 30 min. Since the nitrides exhibit a better oxidation resistance to the low-pressure dry-oxygen than to the atmospheric-pressure dry-oxygen and wet-oxygen, the low pressure oxidation obtains a thinner oxidized nitride for the high-density dynamic-random-access-memories (DRAM's) and metal-oxide-nitride-oxide-semiconductor (MONO'S) memory devices. In addition, this dielectric possesses low leakage current and excellent time-dependent-dielectric-breakdown (TDDB) characteristics. Therefore, this novel recipe is promising for future ULSI technology.<>

Published in:

Electron Device Letters, IEEE  (Volume:15 ,  Issue: 11 )

Date of Publication:

Nov. 1994

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