Referenced Items are not available for this document.
Epitaxial growth of Fe films on Si(100), Si(110), and Si(111) substrates was achieved by dc facing targets sputtering. Substrate dc bias was found to be an important parameter to achieve epitaxial growth. Epitaxial films were not obtained without a dc substrate bias except those on Si(111) substrates. In-plane anisotropy energy for Fe(110) plane was different from the bulk. Uniaxial anisotropy and magnetoelastic energy should be considered with magnetocrystalline anisotropy
Published in:
Magnetics, IEEE Transactions on
(Volume:30
,
Issue:
6
)
Date of Publication: Nov 1994
- Page(s):
- 4836 - 4838
- ISSN :
- 0018-9464
- INSPEC Accession Number:
- 4861022
- Digital Object Identifier :
- 10.1109/20.334238
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Nov 1994
- Sponsored by :
- IEEE Magnetics Society
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