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Ba ferrite thin films with large saturation magnetization deposited by sputtering in mixture of Xe, Ar and O2

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3 Author(s)
N. Matsushita ; Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan ; K. Noma ; M. Naoe

BaM ferrite films 5000 Å thick were deposited on a ZnO underlayer at a substrate temperature of 600°C by the facing targets sputtering method in a mixture of Xe and Ar of 0.19 Pa in addition to O 2 of 0.01 Pa. The Xe partial pressure PXe was varied from 0.0 to 0.19 Pa and then the PAr was varied from 0.19 to 0.0 Pa. The films deposited at PXe of 0.19 Pa had almost the stoichiometric composition of BaM ferrite and the crystallite size ⟨D⟩, the full width at half maximum of the rocking curve Δθ50, saturation magnetization 4πMs, squareness S, perpendicular coercivity Hc⊥ were 300 Å, 3.7°, 5.1 kG, 0.51 and 2.3 kOe, respectively. It should be noted that it had larger 4πMs than that of bulk BaM ferrite, for which 4πMs is 4.8 kG

Published in:

IEEE Transactions on Magnetics  (Volume:30 ,  Issue: 6 )