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Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFET's

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3 Author(s)
Mizuno, Tomohisa ; ULSI Res. Lab., Toshiba Corp., Kawasaki, Japan ; Okumtura, J. ; Toriumi, Akira

Threshold voltage fluctuation has been experimentally studied, using a newly developed test structure utilizing an 8 k-NMOSFET array. It has been experimentally shown that both Vth and the channel dopant number na distributions are given as the Gaussian function, and verified that the standard deviation of na , can be expressed as the square root of the average of na , which is consistent with statistics. In this study, it has been shown that Vth fluctuation (δVth) is mainly caused by the statistical fluctuation of the channel dopant number which explains about 60% of the experimental results. Moreover, we discuss briefly a new scaling scenario, based on the experimental results of the channel length, the gate oxide thickness, and the channel dopant dependence of δVth. Finally, we discuss Vth fluctuation caused by the independent statistical-variations of two different dopant atoms in the counter ion implantation process

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Electron Devices, IEEE Transactions on  (Volume:41 ,  Issue: 11 )