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Charge transport and device parameters from noise measurements

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1 Author(s)
Bosman, Gijs ; Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA

A select number of examples where measurements of number fluctuation noise, carrier multiplication noise and velocity fluctuation noise can be used to determine electronic transport or device parameters are presented

Published in:

Electron Devices, IEEE Transactions on  (Volume:41 ,  Issue: 11 )