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1/f noise sources

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1 Author(s)
Hooge, F.N. ; Dept. of Electr. Eng., Eindhoven Univ. of Technol., Netherlands

This survey deals with 1/f noise in homogeneous semiconductor samples. A distinction is made between mobility noise and number noise. It is shown that there always is mobility noise with an α value with a magnitude in the order of 10-4. Damaging the crystal has a strong influence on α, α may increase by orders of magnitude. Some theoretical models are briefly discussed none of them can explain all experimental results. The α values of several semiconductors are given. These values can be used in calculations of 1/f noise in devices

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Electron Devices, IEEE Transactions on  (Volume:41 ,  Issue: 11 )