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Microscopic simulation of electronic noise in semiconductor materials and devices

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5 Author(s)
Varani, L. ; Centre d''Electron. de Montpellier, Univ. des Sci. et Tech. du Languedoc, Montpellier, France ; Reggiani, Lino ; Kuhn, Tilmann ; Gonzalez, T.
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We present a microscopic interpretation of electronic noise in semiconductor materials and two-terminal devices. The theory is based on Monte Carlo simulations of the carrier motion self-consistently coupled with a Poisson solver. Current and voltage noise operations are applied and their respective representations discussed. As application we consider the cases of homogeneous materials, resistors, n+nn + structures, and Schottky-barrier diodes. Phenomena associated with coupling between fluctuations in carrier velocity and self-consistent electric field are quantitatively investigated for the first time. At increasing applied fields hot-carrier effects are found to be of relevant importance in all the cases considered here. As a general result, noise spectroscopy is found to be a source of valuable information to investigate and characterize transport properties of semiconductor materials and devices

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Electron Devices, IEEE Transactions on  (Volume:41 ,  Issue: 11 )