By Topic

Dispersive subband-resonant nonlinearity in amorphous Si/SiO2 quantum well structures

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
A. V. Zayats ; Inst. of Phys., Aalborg Univ., Denmark ; O. V. Golonzka ; Yu. A. Repeyev ; E. A. Vinogradov

Dispersive nonlinearity in amorphous Si/SiO2 quantum well structures (QW's) has been investigated. The refractive index changes obtained from the intensity-dependent reflection spectra are nonlinearly dependent on the excitation intensity and can be described by the model of the saturating nonlinearity at low pump intensities. The nonlinear refractive index reveals resonant behavior associated with the subband structure of the QW's. The saturated nonlinear index and the saturation intensity have been obtained as Δns=-0.11 and Is=1.9 MW/cm2 at the transitions between the lowest subbands, and Δns~0.3 and Is~0.5 MW/cm2 at the transitions between the second subbands of the valence and conduction bands. The nonlinearity for the second subband transitions has been found high enough to provide potentially bistable operation, but the bistability is not expected at the transitions between the ground subbands. Carrier lifetime less than 1 ps restricting the switching time of the nonlinearity has been estimated from the saturation intensity

Published in:

IEEE Journal of Quantum Electronics  (Volume:30 ,  Issue: 11 )