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A novel HBT distributed amplifier design topology based on attenuation compensation techniques

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3 Author(s)
Kobayashi, K.W. ; Electron. & Technol. Div., TRW Inc., Redondo Beach, CA, USA ; Esfandiari, R. ; Oki, A.K.

We report on a novel HBT distributed amplifier (DA) design which achieves the highest gain-bandwidth product (GBP) per device f/sub T/ so far reported for HBT distributed amplifiers. This paper introduces a new design topology for HBT DA's which incorporates attenuation compensation on both the input and output transmission lines. A four-section HBT DA using this novel topology achieves a gain of 15 dB and a 3-dB bandwidth of >15 GHz. The resulting gain-bandwidth product is 84 GHz. When normalized to the device f/sub T/, this DA achieves the highest normalized gain-bandwidth-product figure of merit for HBT DA's=3.67, which is a 55% improvement over existing state-of-the-art performance. The new device configuration offers 15-20 dB more available gain for the device unit cell and results in gain-bandwidth product improvements of 200% over a conventional common-emitter DA configuration.<>

Published in:

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1994. Digest of Papers., IEEE 1994

Date of Conference:

22-25 May 1994