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Impact of distributed gate resistance on the performance of MOS devices

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3 Author(s)
Razavi, B. ; AT&T Bell Labs., Holmdel, NJ, USA ; Ran-Hong Yan ; Lee, K.F.

This paper describes the impact of gate resistance on cut-off frequency (fT), maximum frequency of oscillation (fmax ), thermal noise, and time response of wide MOS devices with deep submicron channel lengths. The value of fT is proven to be independent of gate resistance even for distributed structures. An exact relation for fmax is derived and it is shown that, to predict fmax, thermal noise, and time response, the distributed gate resistance can be divided by a factor of 3 and lumped into a single resistor in series with the gate terminal

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Circuits and Systems I: Fundamental Theory and Applications, IEEE Transactions on  (Volume:41 ,  Issue: 11 )