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On-wafer calibration techniques and applications at V-band

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4 Author(s)
M. Nishimoto ; Dept. of Electr. Eng., Hawaii Univ., Honolulu, HI, USA ; M. Hamai ; J. Laskar ; R. Lai

There is considerable interest in HEMT MMIC applications operating at V-band and higher frequencies due to their low noise, high power, and high power efficiency capability. A quantitative investigation of calibration methods have been performed to study the effect of calibration techniques on V-band device measurements and model development. This work compares SOLT, LRM, and multi-line TRL calibrations relative to each other. The analysis is then applied to pseudomorphic InGaAs HEMT devices to provide useful information on the effect of calibration on small signal-intrinsic parameter extraction at V-band.<>

Published in:

IEEE Microwave and Guided Wave Letters  (Volume:4 ,  Issue: 11 )