Notification:
We are currently experiencing intermittent issues impacting performance. We apologize for the inconvenience.
By Topic

Effect of spin-orbit split-off bands on GaInP/AlGaInP strained quantum well lasers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Kamiyama, S. ; Semicond. Res. Center, Matsushita Electr. Ind. Co. Ltd., Osaka, Japan ; Uenoyama, Takeshi ; Mannoh, Masaya ; Ohnaka, K.

We theoretically analyzed the effect of the spin-orbit split-off band on GaInP/AlGaInP strained quantum well lasers using 6/spl times/6 Luttinger-Kohn Hamiltonian. Because of the small spin splitting energy of GaInP, we show that the spin-orbit split-off subbands strongly couple with heavy and light hole subbands, and linear gain properties are greatly different from those without the effect of spin-orbit split-off bands. The unstrained quantum well structure is most influenced by the spin-orbit split-off bands, and laser characteristics such as the differential gain and threshold current are degraded. The compressive-strained quantum well has the lowest threshold current, and the tensile-strained quantum well has largest differential gain, which is improved by the effect of the spin-orbit split-off bands.<>

Published in:

Photonics Technology Letters, IEEE  (Volume:6 ,  Issue: 10 )