Referenced Items are not available for this document.
We have developed 1.3 /spl mu/m n-type modulation-doped strained-layer quantum-well lasers. Modulation-doped lasers with long cavities (low threshold gain) exhibit much lower threshold current densities than conventional lasers with undoped barrier layers. The lowest threshold current density we obtained was 250 A/cm/sup 2/ for 1500 /spl mu/m long lasers with five quantum wells. The estimated threshold current density for an infinite cavity length was 38 A/m/sup 2//well. This is the lowest value for InGaAsP-InGaAsP and InGaAs-InGaAsP quantum well lasers to our knowledge.<
Published in:
Photonics Technology Letters, IEEE
(Volume:6
,
Issue:
10
)
Date of Publication: Oct. 1994
- Page(s):
- 1165 - 1166
- ISSN :
- 1041-1135
- INSPEC Accession Number:
- 4809333
- Digital Object Identifier :
- 10.1109/68.329626
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Oct. 1994
- Sponsored by :
- IEEE Photonics Society
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