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A study of laser emission wavelength variations in 1.5 μm InGaAsP/InP BRS laser diodes: theoretical model and experiment

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3 Author(s)
Eliseev, P.G. ; P.N. Lebedev Phys. Inst., Acad. of Sci., Moscow, Russia ; Drakin, A. ; Pittroff, W.

This is a study of the dependence of the emission wavelength on the cavity length observed in laser diodes with InGaAsP/InP buried ridge stripe (BRS) structure. Theoretical calculations were made taking into account the variation of the threshold gain due to the influence of the cavity length on the total optical loss and, therefore, on the level of the carrier density at the threshold. This density affects the spectral position of the gain peak thus creating the regular dependence of the emission wavelength on the cavity length. The band-shrinkage effect and the free carrier absorption effect are also considered. In samples covering the spectral range of 1.46-1.53 μm, the calculated and experimental results agree satisfactorily

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Quantum Electronics, IEEE Journal of  (Volume:30 ,  Issue: 10 )