Cart (Loading....) | Create Account
Close category search window
 

Observation of very high peak-to-valley current ratio (⩾9.4) in amorphous silicon/silicon-carbide double barrier structure with barrier enhancement layer

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Fang, Y.K. ; Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan ; Chen, K.-H. ; Liu, C.-R. ; Jun-Dar Hwang
more authors

A negative differential resistance current/voltage (I/V) curve with a very high peak-to-valley current (PTV) ratio (⩾9.4) has been obtained in the a-Si:H/a-SiC:H double barrier structure with added amorphous silicon barrier enhancement layers. Although similar phenomena have been reported in the crystalline AlGaAs/GaAs double barrier diodes, the effect of the added barrier enhancement layers on the PTV ratio is not so significant as the amorphous silicon. A primary model is proposed to explain this anomalous result. Based on the model, the parameters to lower the leakage current and enhance the resonant tunneling current are suggested

Published in:

Quantum Electronics, IEEE Journal of  (Volume:30 ,  Issue: 10 )

Date of Publication:

Oct 1994

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.