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Dry etch gate recess high breakdown voltage power P-HEMTs

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6 Author(s)
Wu, C.S. ; GaAs Oper. Microelectron. Div., Hughes Aircraft Co., Torrance, CA ; Ren, F. ; Pearton, S.J. ; Hu, M.
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High breakdown voltage (18-20 V) and high power characteristics are obtained for a pseudomorphic InGaAs HEMT (PHEMT) processed with a novel single recess gate technique. High selectivity (>600:1 for GaAs over AlGaAs), damage-free dry etching with excellent uniformity (±7% across 3" diameter wafers, compared to ±20% for a wet etch double recess process) was employed. The devices exhibit good fT values (50 GHz at VDS of 5 V and 35 GHz at V DS of 7 V) at low IDS (100 mA/mm), an essential requirement for high power performance

Published in:

Electronics Letters  (Volume:30 ,  Issue: 21 )