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MOMBE growth of InGaP with tertiarybutylphosphine (TBP) and its application to the carbon-doped base InGaP/GaAs HBTs

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5 Author(s)
Shirakashi, J. ; Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Japan ; Azuma, T. ; Konagai, M. ; Yoshioka, R.T.
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Tertiarybutylphosphine (TBP), which is a promising substitute for phosphine (PH3), was used for the growth of In0.5Ga0.5P by metalorganic molecular beam epitaxy (MOMBE) with elemental In and Ga as group III sources. In the decomposition of TBP, the catalysis by heated Ta is important to obtain high quality In0.5Ga0.5P layers as compared with the case of only pyrolysis. We modified the cracking cell for TBP to the new one by including Ta sheet and shots inside the PBN crucible, and undoped In0.5Ga0.5P with n-type background carrier concentrations of ~4×1015 cm-3 was obtained. Electron concentrations ranging from 1017 to 1019 cm-3 were successfully controlled by using cracked Si2 H6 as n-type dopant source. The MOMBE growth of In0.5Ga0.5P layers was applied to carbon (C)-doped base In0.5Ga0.5P/GaAs heterojunction bipolar transistors (HBTs) with high hole concentrations in the base. Common emitter current gain (hfe) of 28 at Jc=1.1 kA/cm 2 was obtained for HBTs with the hole concentration in the C-doped GaAs base of 1×1020 cm-3

Published in:

Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on

Date of Conference:

27-31 Mar 1994