Cart (Loading....) | Create Account
Close category search window

Conductance transient characterization of reactive ion etched HEMT gate recesses

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Schramm, J.E. ; Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA ; Mondry, M. ; Hu, E.L. ; Merz, James L.

A simple, novel technique was devised to examine the effects of RIE self-bias voltage, plasma exposure time, and oxygen plasma clean conditions on the AlInAs Schottky contact layer of an InP-based HEMT

Published in:

Indium Phosphide and Related Materials, 1994. Conference Proceedings., Sixth International Conference on

Date of Conference:

27-31 Mar 1994

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.