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DC and millimeter-wave performance of watt-level barrier-intrinsic-n/sup +/ diode-grid frequency multiplier fabricated on III-V compound semiconductors

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4 Author(s)
Hwu, R.J. ; Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA ; Sadwick, L.P. ; Luhmann, N.C., Jr. ; Rutledge, D.B.

The authors report the fabrication and millimeter-wave performance of a novel class of monolithic metal-semiconductor heterostructure devices, the barrier-intrinsic-n/sup +/ (BIN) diode-grid frequency multipliers, which are fabricated on III-V compound semiconductors. They also report the measurement of the DC and low-frequency electrical properties of the multiplier. A novel analytical model that accurately describes the structure is presented. Based on the theoretical and experimental studies presented here, the authors predict watt-level CW (continuous wave) output power at 90-180 GHz from a monolithic diode-grid multiplier design using the GaAs BIN concept.<>

Published in:

Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International

Date of Conference:

11-14 Dec. 1988