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Browse Journals & Magazines > Electronics Letters ...> Volume:30 Issue:17 Help

Low threshold, large To injection laser emission from (InGa)As quantum dots

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13 Author(s)
Kirstaedter, N. ; Inst. fur Festkorperphys., Tech. Univ. Berlin ; Ledentsov, N.N. ; Grundmann, M. ; Bimberg, D.
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Low threshold, large To injection laser emission via zero-dimensional states in (InGa)As quantum dots is demonstrated. The dots are formed due to a morphological transformation of a pseudomorphic In0.5Ga0.5As layer. Laser diodes are fabricated with a shallow mesa stripe geometry

Published in:
Electronics Letters  (Volume:30 ,  Issue: 17 )

Date of Publication: 18 Aug 1994

Page(s):
1416 - 1417
ISSN :
0013-5194
INSPEC Accession Number:
4766840
Digital Object Identifier :
10.1049/el:19940939
Date of Current Version :
06 August 2002
Issue Date :
18 Aug 1994
Sponsored by :
Institution of Engineering and Technology

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