By Topic

Kink effect related to the self-side-gating effect in GaAs MESFET's

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Haruyama, Junzi ; ULSI Device Dev. Lab., NEC Corp., Shiga, Japan ; Ohno, Yasuo ; Katano, Humiaki ; Nashimoto, Y.

A kink effect, an abrupt increase in drain current at high drain voltages, was observed in GaAs MESFET's with an Al0.2Ga0.8As/GaAs heterostructure buffer layer. In these MESFET's, impact ionization occurs at the drain side along the channel current path at high drain voltages. On the other hand, a side-gating effect occurs when a negative voltage applied to the gate pad of the MESFET (self-side-gating effect). From measurements of the substrate potential, we conclude that hole accumulation generated by the impact ionization at the channel-side GaAs/Al0.2Ga0.8 As interface cancels the drain current reduction that arises from the self-side-gating effect. This gives rise to the kink effect we observe

Published in:

Electron Devices, IEEE Transactions on  (Volume:41 ,  Issue: 10 )