By Topic

Effects of deposition temperature on the oxidation resistance and electrical characteristics of silicon nitride

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Yoshimaru, M. ; VLSI Res. & Dev. Center, Oki Electr. Ind. Co. Ltd., Tokyo, Japan ; Inoue, N. ; Tamura, H. ; Ino, M.

A study was made of the effects of deposition temperature on the oxidation resistance and electrical characteristics of silicon nitride. It was found that silicon nitride below a certain limit thickness has no oxidation resistance. This threshold falls as the deposition temperature is lowered. 3-nm-thick silicon nitride deposited at 600°C has sufficient oxidation resistance For wet oxidation at 850°C, while 5 nm film deposited at 750°C has no oxidation resistance. The electrical characteristics also improve as the deposition temperature is lowered. 6-nm-thick silicon nitride deposited at 600°C shows a TDDB lifetime that is about two orders longer than that of 6-nm-thick silicon nitride deposited at 700°C. It was also found that the silicon nitride transition layer which is deposited at the initial stage of deposition influences the oxidation resistance and electrical characteristics of thin silicon nitride. It was concluded that lowering the deposition temperature reduces the influence of the transition layer and improves the oxidation resistance and electrical characteristics of thin silicon nitride

Published in:

Electron Devices, IEEE Transactions on  (Volume:41 ,  Issue: 10 )