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Lithium drifted silicon detector fabrication on gettered floating-zone silicon

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4 Author(s)
Walton, J.T. ; Div. of Eng., California Univ., Berkeley, CA, USA ; Wong, Y.K. ; Derhacobian, N. ; Haller, E.E.

A gettering procedure using phosphorus doped glass is shown to remove lithium-ion precipitation sites from p-type floating-zone (FZ) silicon. A model involving interaction between grown-in vacancies and oxidation-injected silicon interstitials is proposed to explain the gettering procedure. Examples of silicon lithium-drifted detectors fabricated on ungettered and gettered FZ silicon are presented

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Nuclear Science, IEEE Transactions on  (Volume:41 ,  Issue: 4 )