Referenced Items are not available for this document.
A model is presented for calculation of the large contribution to electronic noise coming from the new double-metal readout on double-sided silicon strip detectors. It applies to the two types of N-side insulating schemes: electrode extension or P-barrier. The 3D capacitor structure is described by a grid model, whose sub-elements are all 2D calculated, using analytic formulae, discrete electrostatics and device simulation (PROUDS, TOSCA). The model is tested on existing detectors (SI, HPK, CSEM). All calculations are static
Published in:
Nuclear Science, IEEE Transactions on
(Volume:41
,
Issue:
4
)
Date of Publication: Aug 1994
- Page(s):
- 811 - 816
- ISSN :
- 0018-9499
- INSPEC Accession Number:
- 4780902
- Digital Object Identifier :
- 10.1109/23.322811
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Aug 1994
- Sponsored by :
- IEEE Nuclear and Plasma Sciences Society
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