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An analytical two-dimensional perturbation method to model submicron GaAs MESFETs

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2 Author(s)
Donkor, E. ; Dept. of Electr. & Syst. Eng., Connecticut Univ., Storrs, CT, USA ; Jain, F.C.

A two-dimensional analytical model has been developed for finding the potential distribution in submicron GaAs MESFETs. The potential distribution is obtained by solving Poisson's equation with nonrectangular boundary conditions using a perturbation method. The expression for the potential is used to derive the current-voltage relation for GaAs MESFETs having channel lengths ranging from 0.2 to 0.9 μm. The model is applicable in the linear, saturation, and subthreshold regimes of the current-voltage characteristics. Numerically simulated results are compared with experimental data and are found to be in good agreement

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:37 ,  Issue: 9 )