By Topic

A large-signal HSPICE model for the heterojunction bipolar transistor

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
C. T. Matsuno ; TRW, Redondo Beach, CA ; A. K. Sharma ; A. K. Oki

The development of an accurate nonlinear HSPICE model for a 3-×10-μm2 heterojunction bipolar transistor (HBT) is described. The model allows the simulation of nonlinear measurements such as gain at the 1-dB compression point (P1 dB) and third-order intercept point. Experimental data characterizing an HBT at 12.5 GHz are presented, demonstrating the validity of the model for MMIC chip designs

Published in:

IEEE Transactions on Microwave Theory and Techniques  (Volume:37 ,  Issue: 9 )