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An analytical model for I-V and small-signal characteristics of planar-doped HEMTs

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2 Author(s)
G. -W. Wang ; Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA ; L. F. Eastman

An analytical current-voltage (I-V) model for planar-doped HEMTs is developed. This compact model covers the complete range of I-V characteristics, including the current saturation region and parasitic conduction in the electron-supplying layer. Analytical expressions for the small-signal parameters and current-gain cutoff frequency are derived from the I-V model. Modeling results for a 0.1-μm-gate planar-doped AlInAs-GaInAs HEMT show excellent agreement with measured characteristics. Threshold voltages and parasitic conduction in planar-doped and uniformly doped HEMTs are also compared and discussed

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IEEE Transactions on Microwave Theory and Techniques  (Volume:37 ,  Issue: 9 )