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DC and transmission line models for a high electron mobility transistor

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2 Author(s)
Huang, D.-H. ; Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA ; Lin, Hung C.

Two improved DC models are developed to describe the output I -V (current-voltage) characteristics and small-signal parameters of a GaAs high-electron-mobility transistor (HEMT). A simple analytical, nonlinear, charge-control model for a two-dimensional electron gas is introduced and included in one of the DC models. The HEMT is modeled as a transmission line for the microwave-frequency AC analysis, and its microwave performance is predicted by the parameters obtained from fitting DC characteristics. Both DC and AC model predictions show a good agreement with experimental results for a 0.3-μm GaAs HEMT

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:37 ,  Issue: 9 )