Cart (Loading....) | Create Account
Close category search window
 

AlInAs-GaInAs HEMT for microwave and millimeter-wave applications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)

The status of lattice-matched high-electron-mobility transistors (HEMTs) and pseudomorphic AlInAs-GaInAs grown on In substrates is reviewed. The best lattice-matched devices with 0.1-μm gate length had a transconductance gm=1080 mS/mm and a unity current gain cutoff frequency fT=178 GHz, whereas similar pseudomorphic HEMTs had gm=1160 mS/mm and fT=210 GHz. Single-stage V-band amplifiers demonstrated 1.3- and 1.5-dB noise figures and 9.5- and 8.0-dB associated gains for the lattice-matched and pseudomorphic HEMTs, respectively. The best performance achieved was a minimum noise figure of Fmin=0.8 dB with a small-signal gain of Ga=8.7 dB

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:37 ,  Issue: 9 )

Date of Publication:

Sep 1989

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.