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SPICE model and parameters for fully-depleted SOI MOSFET's including self-heating

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5 Author(s)
Su, L.T. ; Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA ; Antoniadis, D.A. ; Arora, N.D. ; Doyle, B.S.
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A simple methodology to accurately extract constant temperature model parameters from static measurements of fully-depleted SOI MOSFET current-voltage characteristics is demonstrated. Self-heating is included in an existing physically-based, short-channel bulk MOSFET model, PCIM, by allowing the temperature to change linearly with power dissipation at each bias point. Only a simple modification of the channel bulk charge in PCIM is necessary to adapt it for SOI. The temperature dependence of the physical parameters (mobility, flatband voltage, and saturation velocity) are also fitted and included in the model. Excellent fit to experimental fully-depleted SOI data is shown over a large range of bias conditions and channel lengths. Once the static SOI data is fitted, the constant temperature model parameters appropriate for circuit simulation are easily extracted.<>

Published in:

Electron Device Letters, IEEE  (Volume:15 ,  Issue: 10 )