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Remarkable reduction of threshold current density of 670 nm GaInAsP/AlGaAs visible lasers by increasing Al content of AlGaAs cladding layers

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2 Author(s)
Chong, T.H. ; Dept. of Electr. & Electron. Eng., Sophia Univ., Tokyo, Japan ; Kishino, K.

Extremely low threshold current density operation of the LPE grown 670 nm GaInAsP/AlGaAs lasers has been realised with drastic improvement of the characteristic temperature of the threshold from 45 K to 90 K by increasing the Al content of the AlGaAs cladding layers from 0.7 to 0.95. The threshold current density was 1.7 kA/cm2, about one-third of the previously reported value of 5-6 kA/cm2.

Published in:

Electronics Letters  (Volume:25 ,  Issue: 12 )