By Topic

Automated parameter extraction and modeling of the MOSFET below threshold

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
A. L. Silburt ; Mosaid Inc., Carp, Ont., Canada ; A. R. Boothroyd ; M. Digiovanni

A subthreshold model for use in circuit simulation software is described. The model includes representation of nonuniform substrate impurity concentrations and short-channel and narrow-channel effects, while being simple in form. It has been developed in concert with an automated parameter-extraction methodology. The model adds only one parameter to the existing strong inversion model with which it is fully integrated. The accuracy and computational efficiency are suitable for circuit simulation. The results of an extraction carried out on nMOS transistors with channel widths from 70 to 0.9 μm and channel lengths from 35 to 1.25 μm over a wide range of bias conditions are described

Published in:

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems  (Volume:7 ,  Issue: 4 )