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Low-temperature polycrystalline-silicon TFT on 7059 glass

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6 Author(s)
Czubatyj, W. ; Energy Conversion Devices Inc., Troy, MI, USA ; Beglau, D. ; Himmler, R. ; Wicker, G.
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A polycrystalline-silicon (poly-Si) thin-film transistor (TFT) deposited at low temperature on Corning 7059 glass is reported. It has practical applications for low-cost thin-film display and imaging electronics manufacturing. All the process steps used to fabricate the poly-Si device take place at temperatures of 550 degrees C or less. The poly-Si films exhibit crystallite grain sizes on the order of 5000 AA, and the fabricated devices show field-effect mobilities of 10-20 cm/sup 2//V-s and threshold voltages around zero. A plasma process to form the source and drain contacts has also been developed.<>

Published in:

Electron Device Letters, IEEE  (Volume:10 ,  Issue: 8 )