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Collector offset voltage of heterojunction bipolar transistors grown by molecular beam epitaxy

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4 Author(s)
Won, T. ; Coordinated Sci. Lab., Illinois Univ., Urbana, IL, USA ; Iyer, S. ; Agarwala, S. ; Morkoc, Hadis

The collector-emitter offset voltages of InAlAs/InGaAs heterojunction bipolar transistors grown by molecular-beam epitaxy are discussed. Both the difference between emitter and collector areas and electrical asymmetry between emitter and collector junctions in these mesa-isolated transistors account for the offset voltages observed. Devices exhibited offset voltages in the range of 50-300 mV, depending on the structures and device sizes. Several electrical and geometrical factors affecting the offset voltage are discussed in detail.<>

Published in:

Electron Device Letters, IEEE  (Volume:10 ,  Issue: 6 )