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Blanket LVD tungsten silicide technology for smart power applications

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4 Author(s)
K. Shenai ; General Electric Co., Schenectady, NY, USA ; P. A. Piacente ; R. Saia ; B. J. Baliga

A high-frequency power MOSFET structure fabricated using blanket deposited LPCVD (low-pressure chemical vapor deposition) WSi/sub 2/ gate and selectively deposited LPCVD tungsten source contact metallurgy is reported. A high-density power MOSFET technology suitable for smart power applications which simultaneously lowers the gate sheet resistance and source contact resistance is discussed. This technology was used to fabricate 30-V and 50-V power FETs with excellent high-frequency performances. The measured specific on-resistance R/sub sp/, specific input capacitance C/sub sp/, and switching times are among the lowest reported in the literature for any power FET structure in this reverse blocking voltage range.<>

Published in:

IEEE Electron Device Letters  (Volume:10 ,  Issue: 6 )