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0.25- mu m gate millimeter-wave ion-implanted GaAs MESFETs

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5 Author(s)
Wang, G.W. ; Ford Microelectron. Inc., Colorado Springs, CO, USA ; Milton Feng ; Lau, C.L. ; Ito, C.
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Quarter-micrometer gated ion-implanted GaAs MESFETs which demonstrate device performance comparable to AlGaAs/InGaAs pseudomorphic HEMTs (high-electron mobility transistors) have been successfully fabricated on 3-in-diameter GaAs substrates. The MESFETs show a peak extrinsic transconductance of 480 mS/mm with a high channel current of 720 mA/mm. From S-parameter measurements, the MESFETs show a peak current-gain cutoff frequency f/sub t/ of 68 GHz with an average f/sub t/ of 62 GHz across the wafer. The 0.25- mu m gate MESFETs also exhibit a maximum-available-gain cutoff frequency f/sub t/ greater than 100 GHz. These results are the first demonstration of potential volume production of high-performance ion-implanted MESFETs for millimeter-wave application.<>

Published in:

Electron Device Letters, IEEE  (Volume:10 ,  Issue: 5 )