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High performance three-terminal δ-doped GaAs negative resistance field-effect transistor based on real-space transfer

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4 Author(s)
Wu, C.L. ; Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan ; Hsu, W.C. ; Tsai, M.S. ; Shieh, H.M.

A three-terminal δ-doped GaAs real-space transfer transistor has been demonstrated by low-pressure metal organic chemical vapour deposition for the first time. The device has the advantages of: ease of growth and fabrication, large and adjustable peak-to-valley current ratio even at room temperature, extremely sharp charge injection, high transconductance, and high-power handling capability

Published in:

Electronics Letters  (Volume:30 ,  Issue: 18 )

Date of Publication:

1 Sep 1994

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