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Highly doped 1.55 μm GaxIn1-xAs/InP distributed Bragg reflector stacks

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3 Author(s)
Guy, P. ; Dept. of Electron. & Electr. Eng., Univ. Coll. London ; Woodbridge, K. ; Hopkinson, M.

The authors have investigated 20 period lattice matched mirror stacks doped to 5×1018 cm-1 and 1019 cm-1 at 1.55 μm in GaxIn1-xAs/InP and have obtained greater than 95% reflectivity over 100 nm and peak reflectivities up to 98%

Published in:

Electronics Letters  (Volume:30 ,  Issue: 18 )