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60-GHz pseudomorphic-MODFET low-noise MMIC amplifiers

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9 Author(s)
Metze, G.M. ; COMSAT Labs., Clarksburg, MD, USA ; Cornfeld, A. ; Carlson, E. ; Dahrooge, G.
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The development of V-band low-noise monolithic microwave integrated circuits (MMICs) based on pseudomorphic modulation-doped FETs (P-MODFETs) is presented. These dual-stage MMICs incorporate P-MODFETs, with 0.35- mu m*60- mu m gates, as the active elements, electron-beam-written tuning elements, and DC-blocking and bias networks. The dual-stage chips exhibited a maximum gain of 10.2 dB at 59.5 GHz and a minimum noise figure of 5.3 dB, with an associated gain of 8.2 dB at 58.2 GHz. A cascaded four-stage amplifier using two MMIC modules exhibited 5.8-dB minimum noise figure with an associated gain of 18.3 dB at 58 GHz and up to 21.1 dB of maximum gain.<>

Published in:

Electron Device Letters, IEEE  (Volume:10 ,  Issue: 4 )